200 Photomicrosensor (Transmissive) EE-SM3
Photomicrosensor (Transmissive)
EE-SM3 (To be discontinued April 2006)
I Dimensions
Note:All units are in millimeters unless otherwise indicated.
I Features
"General-purpose model with a 3-mm-wide slot.
"PCB mounting type.
"With a red LED as an emitter element and a Photo-Darlington tran-
sistor as a detector element.
I Absolute Maximum Ratings (Ta=25?SPAN class="pst EE-SM3_2584547_7">C)
Note:1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25癈.
2. Complete soldering within 10 seconds.
I Ordering Information
I Electrical and Optical Characteristics (Ta = 25?SPAN class="pst EE-SM3_2584547_7">C)
Internal Circuit
Terminal No. Name
A
Anode
K
Cathode
C
Collector
E
Emitter
K
A
C
E
Dimensions Tolerance
3 mm max. ?/SPAN>0.3
3 < mm d 6 ?/SPAN>0.375
6 < mm d 10 ?/SPAN>0.45
10 < mm d 18 ?/SPAN>0.55
18 < mm d 30 ?/SPAN>0.65
Two, C1.7
Four,
0.45
Four, 0.45
6 min.
Cross section AA
Cross section BB
21?.15
5.5 max.
5.5 max.
13?.2
10.2?.2
4.2?.2
16
0.8
0.8
29
Unless otherwise specified, the
tolerances are as shown below.
Two, 3.2?.2 dia. holes
Item
Symbol Rated value
Emitter Forward current I
F
15 mA (seenote 1)
Pulse forward
current
I
FP
---
Reverse voltage V
R
4 V
Detector CollectorEmitter
voltage
V
CEO
24 V
EmitterCollector
voltage
V
ECO
---
Collector current I
C
20 mA
Collector
dissipation
P
C
75 mW (seenote 1)
Ambient
temperature
Operating
Topr 20癈 to 60癈
Storage
Tstg 20癈 to 80癈
Soldering temperature
Tsol 260癈 (see note 2)
Description
Model
Photomicrosensor (transmissive) EE-SM3
Item
Symbol
Value
Condition
Emitter Forward voltage
V
F
2.0 V typ., 2.6 V max.
I
F
= 15 mA
Reverse current
I
R
0.01 礎 typ., 5 礎 max.
V
R
= 4 V
Peak emission wavelength ?/SPAN>
P
700 nm typ.
I
F
= 3 mA
Detector Light current
I
L
1.5 mA min., 120 mA max.
I
F
= 3 mA, V
CE
= 10 V
Dark current
I
D
2 nA typ., 250 nA max.
V
CE
= 10 V, 0 lx
Leakage current
I
LEAK
---
---
CollectorEmitter saturated
voltage
V
CE
(sat) 0.9 V typ.
I
F
= 3 mA, I
L
= 0.5 mA
Peak spectral sensitivity
wavelength
?/DIV>
P
750 nm typ.
V
CE
= 10 V
Rising time
tr
180 祍 typ.
V
CC
= 5 V, R
L
= 100 &,
I
L
= 10 mA
Falling time
tf
60 祍 typ.
V
CC
= 5 V, R
L
= 100 &,
I
L
= 10 mA
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